Possibility of using inductive energy storage generators for excitation of exciplex, plasma, and self-terminating lasers is demonstrated. Lasing in He(Ne, Ar)–Xe–HCl gas mixture at λ= 308 nm, in Ne–H2 mixture at λ= 585.3 nm, and in nitrogen at λ = 337.1 nm has been obtained. Data on plasma, semiconductor, and low-pressure opening switches are presented.