Vol. 31, issue 03, article # 2

Abstract:

The spectral characteristics of the spontaneous and stimulated luminescence of strongly silicon-doped Al_xGa_1–xN structures with the concentration n_Si > 10²⁰ cm^–3, at the optical pulse pumping by radiation with λ = 266 nm, are studied. The obtained dominant broadband radiation with a full width at half maximum ~ 150 nm covers the whole visible spectral range. The radiation spectrum from the end of the structure is split into the narrow components determined by the formed flat waveguide mode structure. The results are indicative of the stimulated radiation character. The measured amplification coefficients values for different structures are in the range 20–70 cm^–1.

Keywords:

AlxGa1–xN structures, luminescence, amplification

References:

    1.  III-Nitride Based Light Emitting Diodes and Applica-tions / T.-Y. Seong, J. Han, H. Amano, H. Morkoc (eds). Singapore: Springer, 2013. V. 126. 390 p.
   2. Sizov D., Bhat R., Zah Ch.-E.J. Gallium indium nitride-based green lasers // J. Lightwave Technol. 2012. V. 30. P. 679–699.
   3. Razeghi M., Henini M. Optoelectronic Devices: III – Nitrides. Amsterdam: Elsevier, 2004. 575 p.
   4. Moustakas Th.D. Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy // MRS Commun. 2016. V. 6. P. 247–269.
   5. Lucenko E.V., Rzheuckij N.V., Pavlovskij V.N., Jablonskij G.P., Nechaev D.V., Sitnikova A.A., Ratnikov V.V., Kuznecova Ja.V., Zhmerik V.N., Ivanov S.V. Spontannoe i stimulirovannoe izluchenie v srednem ul'trafioletovom diapazone kvantovo-razmernyh geterostruktur na osnove AlGaN-soedinenij, vyrashhennyh metodom molekuljarno-puchkovoj jepitaksii na podlozhkah c-sapfira // Fizika tverdogo tela. 2013. V. 55. P. 2058–2066.
   6. Kneissl M., Kolbe T., Chua C., Kueller V., Lobo N., Stellmach J., Knauer A., Rodriguez H., Einfeldt S., Yang Z., Johnson N.M., Weyers M. Advances in group III-nitride-based deep UV light-emitting diode technology // Semicond. Sci. Technol. 2011. V. 26. P. 014036.
   7. Nakamura S., Pearton S., Fasol G. The blue laser diode. Berlin: Springer, 2000. 368 p.
   8. Bokhan P.A., Gugin P.P., Zakrevsky Dm.E., Zhuravlev K.S., Malin T.V., Osinnykh I.V., Solomonov V.I., Spirina A.V. Luminescence and superradiance in electron- beam-excited Al_xGa_1–xN // J. Appl. Phys. 2014. V. 116. P. 113103.
   9. Osinnykh I.V., Malin T.V., Plyusnin V.F., Suranov A.S., Gilinsky A.M., Zhuravlev K.S. Characterization of the green band in photoluminescence spectra of heavily doped Al_xGa_1–xN:Si with the Al content x > 0.5 // Jpn. J. Appl. Phys. 2016. V. 55. P. 05FG09.
10. Zhuravlev K.S., Osinnykh I.V., Protasov D.Yu., Malin T.V., Davydov V.Yu., Smirnov A.N., Kyutt R.N., Spirina A.V., Solomonov V.I. Characterization of MBE-grown AlGaN layers heavily doped using silane // Phys. Status Solidi C. 2013. V. 10. P. 315–318.
11. Osinnykh I.V., Malin T.V., Plyusnin V.F., Zhuravlev K.S., Ber B.Ya., Kazantsev D.Yu. Nature of intensive defect-related broadband luminescence of heavily doped Al_xGa_1–xN:Si layers // J. Phys.: Conf. Ser. 2017. V. 816. P. 012002.
12. Shaklee K.L., Nahory R.E., Leheny R.F. Optical gain in semiconductors // J. Lumin. 1973. V. 7. P. 284–309.
13. Sanford N.A., Robins L.H., Davydov A.V., Shapiro A., Tsvetkov D.V., Dmitriev A.V., Keller S., Mishra U.K., DenBaars S.P. Refractive index study of Al_xGa_1–xN films grown on sapphire substrates // J. Appl. Phys. 2003. V. 94. P. 2980–2991.
14. Antoine-Vincent N., Natali F., Mihailovic M., Byrne D., Semond F., Massies J. Determination of the refractive indices of AlN, GaN, and Al_xGa_1–xN grown on (111)Si substrates // J. Appl. Phys. 2003. V. 93. P. 5222–5226.
15. Kogelnik H. An introduction to integrated optics // IEEE Trans. Microw. Theory Techniq. 1975. V. 23. P. 2–16.
16. Malin T.V., Gilinsky A.M., Mansurov V.G., Protasov D.Yu., Kozhuhov A.S., Yakimov E.B., Zhuravlev K.S. Increase in the diffusion length of minority carriers in Al_xGa_1–xN alloys
(x = 0–0.1) fabricated by ammonia molecular beam epitaxy // Semiconductors. 2015. V. 49. P. 1285–1289.
17. Kück S. Laser-related spectroscopy of ion-doped crystals for tunable solid-state lasers // Appl. Phys. B. 2001. V. 72. P. 515–562.